Comchip Technology CO., LTD.

RoHS Device

Halogen Free

Circuit Diagram

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating junction temperature range

Tj

°C

Storage temperature range

TSTG

-55 to +150

°C

-55 to +150

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

Electrical Characteristics (at TA=25°C unless otherwise noted)

Features

- Uni-directional ESD protection.

- Surface mount package.

- High component density.

SMD ESD Protection Diode

Symbol

Typ

Parameter

Min

Unit

Conditions

Breakdown voltage

VBR

V

IR = 40mA

Reverse leakage current

IR

nA

VRWM = 3.3V

Clamping voltage

VC

V

IPP = 1A, TP = 8/20µs

IPP = 200A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

Max

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

ESD

kV

±30

REV:A

Page 1

AQW-G7089

600

3.3

4.4

243

3

12

14

5

2800

200

VC

V

ACPDTS3V3UHT-HF

IR = 10mA

VBR

V

4.4

3.3

3.3

TS/SOD-123FL

Dimensions in inches and (millimeter)

0.043(1.10)

0.031(0.80)

0.146(3.70)

0.137(3.50)

0.075(1.90)

0.066(1.70)

0.008(0.20)

0.003(0.10)

0.039(1.00)

0.035(0.90)

0.028(0.70)

0.015(0.40)

0.028(0.70)

0.015(0.40)

0.114(2.90)

0.106(2.70)

Mechanical data

- Case: SOD-123FL, molded plastic.

- Polarity: Indicated by cathode band.

- Mounting position: Any.

- Terminals: Solderable per MIL-STD-750,

method 2026.

- AEC-Q101 Qualified & PPAP.