6.17 Typical Characteristics (continued)

at VDD1 = 5V, VDD2 = 3.3V, VREFIN = 3.3V, VINP = –250mV to 250mV, VINN = 0V, and fIN = 10kHz (unless otherwise

noted)

3

3.5

4

4.5

5

5.5

VDDx (V)

70

73

76

79

82

85

vs VDD1

vs VDD2

G034

Figure 6-30. Signal-to-Noise Ratio vs Supply Voltage

-40

-25

-10

5

20

35

50

65

80

95

110 125

Temperature (ºC)

70

73

76

79

82

85

Device 1

Device 2

Device 3

G035

Figure 6-31. Signal-to-Noise Ratio vs Temperature

0.01

0.1

1

10

100

1000

Ripple Frequency (kHz)

-140

-120

-100

-80

-60

-40

-20

0

vs VDD1

vs VDD2

G041

Figure 6-32. Power-Supply Rejection Ratio vs Ripple Frequency

3

3.5

4

4.5

5

5.5

VDDx (V)

-140

-120

-100

-80

-60

-40

-20

0

vs VDD1

vs VDD2

G040

Figure 6-33. Power-Supply Rejection Ratio vs Supply Voltage

-40

-25

-10

5

20

35

50

65

80

95

110 125

Temperature (ºC)

-140

-120

-100

-80

-60

-40

-20

0

vs VDD1

vs VDD2

G042

Figure 6-34. Power-Supply Rejection Ratio vs Temperature

3

3.5

4

4.5

5

5.5

VDD2(V)

250

255

260

265

270

275

280

285

290

295

300

Device 1

Device 2

Device 3

G011

Figure 6-35. Output Bandwidth vs Low-Side Supply Voltage

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