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SCT4026DR Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer SCT4026DR
Bauteilbeschribung  SiC N-Channel MOSFET
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SCT4026DR Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCF80134
eq SCT4026DR
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Low On-resistance
·
Fast Switching Speed
·
Fast Reverse Recovery
·
Easy to Parallel
APPLICATIONS
·
Solar Inverters
·
Motor Drives
·
DC-DC Converters
·
Induction Heating And Welding
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
750
V
VGSS
Gate-Source Opetation Voltage
-4/+21
V
ID
Drain Current-Continuous
56
A
Drain Current-Continuous@Tc=100℃
39
A
IDM
Drain Current-Single Pluse
91
A
PD
Total Dissipation @TC=25℃
177
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-44~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.85
℃
/W


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