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RA4T1 Datenblatt(PDF) 22 Page - Renesas Technology Corp |
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RA4T1 Datenblatt(HTML) 22 Page - Renesas Technology Corp |
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22 / 89 page ![]() Table 2.6 I/O VOH, VOL, and other characteristics (2 of 2) Parameter Symbol Min Typ Max Unit Test conditions Input pull-up MOS current Ports P0 to P5, P8 (except for ports P000 to P003) Ip –300 — –10 µA VCC = 2.7 to 3.6 V Vin = 0 V Pull-up current serving as the SCL current source I3C*4 ICS 3 — 12 mA VCC = 3.0 to 3.6 V Vin = 0.3 × VCC to 0.7 × VCC Input capacitance Ports P003, P014, P015, P814, P815 Cin — — 16 pF Vbias = 0 V Vamp = 20 mV f = 1 MHz Ta = 25°C Other input pins — — 8 Note 1. SCL0_A, SCL0_B, SCL0_C, SDA0_A, SDA0_B, and SDA0_C (total 6 pins). Note 2. I3C_SCL/SCL0_D, I3C_SDA/SDA0_D (total 2 pins). Note 3. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving ability is retained in Deep Software Standby mode. When medium or low driving ability is selected, refer to the values of other output pins. Note 4. I3C_SCL/SCL0_D (1 pin). This is the value when IIC high speed mode is selected. Note 5. P0nPFS.ASEL (n = 3) = 1 Note 6. P0nPFS.ASEL (n = 3) = 0 RA4T1 Datasheet 2. Electrical Characteristics R01DS0415EJ0140 Rev.1.40 May 29, 2026 Page 22 of 89 |
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