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ISC4N1350 Datenblatt(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISC4N1350 Datenblatt(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 5 page ![]() isc N-Channel MOSFET Transistor ISC4N1350 www.iscsemi.com 2023-9-7 3 td(OFF) Turn-Off Delay Time -- 57 -- tf Fall Time -- 52 -- SOURCE-DRAIN BODY DIODE CHARACTERISTICS ISD Continuous Source Current Integral pn-diode in MOSFET -- -- 4.0 A ISM Pulsed Source Current -- -- 10 VSD Diode Forward Voltage ISD= 4A, VGS = 0 V -- -- 1.63 V trr Reverse Recovery Time VGS=0V IF=4 A, di/dt=100A/µs -- 255 -- ns Qrr Reverse Recovery Charge -- 1.1 -- uC Typical Characteristics |
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