ST6G3240 datasheet(13/29 Pages) STMICROELECTRONICS

Teilenummer	ST6G3240

Bauteilbeschribung	Dual supply level translator for dual memory cards (mini SD/micro SD managed NAND)

PDF	29 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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13 / 29 page

ST6G3240

Electrical characteristics

13/29

Table 9.

DC specification for VCCBn

Symbol

Parameter

Test conditions

Value

Unit

VCCA

(V)

VCCBn

(V)

TA = 25 °C

-40 to 85 °C

Min

Max

Min

Max

VIH

High level input

voltage

1.4 – 3.6

1.4 – 1.95

0.65

VCCBn

0.65

VCCBn

1.95 – 2.7

1.7

2.7 – 3.6

2.0

VIL

Low level input

voltage

1.4 – 3.6

1.4 – 1.95

0.35

VCCBn

0.35

VCCBn

1.95 – 2.7

0.7

2.7 – 3.6

0.8

VOH

High level

output voltage

1.4 – 3.6

IOH = -100 µA

VCCBn-

0.1

VCCBn-

0.1

1.4

IOH = -1 mA

1.10

1.65

IOH = -2 mA

1.20

2.7

IOH = -4 mA

2.20

3.0

IOH = -8 mA

2.30

3.6

IOH = -8 mA

3.00

VOL

Low level

output voltage

1.4 – 3.6

IOL = 100 µA

0.20

1.4

IOL = 1 mA

0.35

1.65

IOL = 2 mA

0.45

2.7

IOL = 4 mA

0.55

3.0

IOL = 8 mA

0.70

3.6

IOL = 8 mA

0.70

IIBn

Input leakage

current per

input channel

1.4 – 3.6

VIBn =VCCBn or

GND

±0.5

±5

µA

IOZBn

High

impedance

output leakage

current

3.6

VIA = GND to

3.6 V

VIBn = GND to

3.6

IN1,IN2 = VCCA

IN1,IN2 = GND

±1.0

±10

µA

IOFF

Power off B-

side I/O

leakage current

VIBn=0 to 3.6V

INn= 0,

DIR =0

±1.0

±10

µA

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