2SA1770 datasheet(1/2 Pages) ISC

Teilenummer	2SA1770

Bauteilbeschribung	Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1770

www.iscsemi.com

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DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -160V(Min)

· Good Linearity of hFE

· Complement to Type 2SC4614

APPLICATIONS

·

High-voltage switching circuits

·

Power supply circuit

·

Driver circuit

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-6.0

V

IC

Collector Current-Continuous

-1.5

A

ICP

Collector Current Pluse

-2.5

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SA1770 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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