EB13005 datasheet(1/3 Pages) SY

Teilenummer	EB13005

Bauteilbeschribung	EB SERIES TRANSISTORS

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SY semiconductors

Shenzhen SY Semiconductors Co.，LTD.

EB SERIES TRANSISTORS

EB13005

●

FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA

●

APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST

●

Absolute Maximum Ratings (Tc=25℃)

TO-220

NPN

PARAMETER

SYMBOL

VALUE

UN I T

Collector–Base Voltage

VCBO

700

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

5.0

A

Total Power Dissipation

PC

75

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

●

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX UN I T

Collector–Base Cutoff Current

ICBO

VCB=700v

100

µ

A

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

µ

A

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

IC=1A IB=0.2A

0.5

V

Collector–Emitter Saturation

Voltage

Vcesat

IC=4A IB=1A

1.5

V

Base–Emitter Saturation Voltage

Vbesat

IC=1A IB=0.2A

1.5

V

VCE=5v IC=10mA

7

VCE=5v IC=1A

10

40

DC Current Gain

HFE

VCE=5v IC=4A

5

Storage Time

Ts

2.0

4.0

µ

S

Falling Time

Tf

VCC=5V

IC=0.5A

1.0

µ

S

●

CLASSIFICATION OF HFE AND TS

HFE

10-15

15-20

20-25

25-30

TS

2.0-2.5

2.5-3.0

3.0-3.5

3.5-4.0

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