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GD32F310 Datenblatt(PDF) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32F310 Datenblatt(HTML) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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58 / 81 page ![]() GD32F310xx Datasheet 57 Table 4-28. ADC RAIN max for fADC = 36 MHz(1) Ts(cycles) ts( μs) RAINmax (kΩ) 1.5 0.04 0.8 7.5 0.20 5.1 13.5 0.37 9.4 28.5 0.79 20.1 41.5 1.15 29.4 55.5 1.54 39.5 71.5 1.98 50.9 239.5 6.65 171 (1) Based on characterization, not tested in production. Table 4-29. ADC dynamic accuracy at fADC = 14 MHz(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC = 14 MHz VDDA = VDD = 3.3 V Input Frequency = 20 kHz Temperature = 25 ℃ — 10.9 — bits SNDR Signal-to-noise and distortion ratio — 67.3 — dB SNR Signal-to-noise ratio — 67.6 — THD Total harmonic distortion — -79 — (1) Based on characterization, not tested in production. Table 4-30. ADC dynamic accuracy at fADC = 28 MHz(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC = 28 MHz VDDA = VDD = 3.3 V Input Frequency = 20 kHz Temperature = 25 ℃ — 10.8 — bits SNDR Signal-to-noise and distortion ratio — 66.7 — dB SNR Signal-to-noise ratio — 67.0 — THD Total harmonic distortion — -78 — (1) Based on characterization, not tested in production. Table 4-31.ADC dynamic accuracy at fADC = 36 MHz(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC = 36 MHz VDDA = VDD = 3.3 V Input Frequency = 20 kHz Temperature = 25 ℃ — 10.8 — bits SNDR Signal-to-noise and distortion ratio — 66.7 — dB SNR Signal-to-noise ratio — 67.0 — THD Total harmonic distortion — -78 — (1) Based on characterization, not tested in production. Table 4-32. ADC static accuracy at fADC = 14 MHz(1) Symbol Parameter Test conditions Typ Max Unit Offset Offset error fADC = 14 MHz VDDA = VDD = 3.3 V ±1 — LSB DNL Differential linearity error ±1 — INL Integral linearity error ±1.5 — (1) Based on characterization, not tested in production. |
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