LPW5210-03

Nov.-2012

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Page 3 of 5

Preliminary Datasheet

LPW5210

Absolute Maximum Ratings

Note 1



Input Voltage to GND --------------------------------------------------------------------------------------------------- 6.5V



Output Voltage to GND ------------------------------------------------------------------------------------------------ 6.5V



Other pin to GND ---------------------------------------------------------------------------------------------------------- 6V



Maximum Junction Temperature ---------------------------------------------------------------------------------- 150°C



Operating Ambient Temperature Range (TA) -------------------------------------------------------- -40℃ to 85°C



Maximum Soldering Temperature (at leads, 10 sec) ------------------------------------------------------ 260°C

Note 1.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Thermal Information



Maximum Power Dissipation (SOT23-5, PD, TA=25°C) ----------------------------------------------------- 0.45W



Thermal Resistance (SOT23-5, θJA) ------------------------------------------------------------------------- 250℃/W

ESD Susceptibility



HBM(Human Body Mode) --------------------------------------------------------------------------------------------- 2KV



MM(Machine Mode) --------------------------------------------------------------------------------------------------- 200V

Electrical Characteristics

(Over recommended operating conditions unless specified otherwise, TA=25℃ )

Symbol

Parameter

Condition

Min

Typ

Max

Units

VIN

Input Voltage

2.5

6

V

IOUT

Output Current Limited

RISET=10K

680

mA

RISET=6.8K

1000

RISET=4.53K

1500

RDS(ON)

Output N-MOSFET RDS(ON)

160

mΩ

IQ

Quiescent Current

VIN=3V

16

28

µA

ISHDN

Shutdown Current

VEN=GND

1

µA

VEN(L)

Enable Threshold Low

0.4

V

VEN(H)

Enable Threshold High

1.4

V

IEN

Input High Current

VIN=VEN=5.0V

5

µA