LE-A-Q7WN datasheet(5/25 Pages) AMSOSRAM

Teilenummer	LE-A-Q7WN

Bauteilbeschribung	OSRAM OSTAR™ Projection Compact

PDF	25 Pages

Scroll/Zoom	100%

Hersteller	AMSOSRAM [ams-OSRAM AG]

Direct Link	https://ams-osram.com/

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LE A Q7WN

DATASHEET

5 | Version 1.0 | 2025-06-25

Characteristics

F = 1000 mA; TS = 25 °C; per chip

Parameter

Symbol

Values

Peak Wavelength

peak

typ.

625 nm

Dominant Wavelength 3)

dom

min.

typ.

max.

612 nm

617 nm

624 nm

Spectral bandwidth at 50% I

rel,max

∆λ

typ.

16 nm

Viewing angle at 50% I

2φ

typ.

120 °

Radiating surface

color

typ.

1.00 x 2.00

mm2

Partial Flux acc. CIE 127:2007 4)

F = 1000 mA

E/V, 120°

typ.

0.76

Forward Voltage 5)

F = 1000 mA

min.

typ.

max.

1.95 V

2.35 V

2.55 V

Reverse voltage (ESD device)

R ESD

min.

45 V

Reverse voltage 2)

R = 20 mA

max.

1.2 V

Real thermal resistance junction/solderpoint 6)

thJS real

typ.

max.

1.7 K / W

2.1 K / W

Electrical thermal resistance junction/solderpoint 6)

with efficiency η

e = 20 %

thJS elec.

typ.

max.

1.4 K / W

1.7 K / W

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