2N6285 datasheet(1/2 Pages) ISC

Teilenummer	2N6285

Bauteilbeschribung	Silicon PNP Darlington Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Darlington Power Transistor

2N6285

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -60V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat)= -3.0V(Max) @IC= -20A,IB= -200mA

APPLICATIONS

· Audio Power Amplifier

· Low- frequency switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-20

A

ICP

Collector Current-Pulse

-40

A

IB

Base Current

-0.5

A

PC

Collector Power Dissipation

160

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

1

3

2

1

3

2

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