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FZT751 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer FZT751
Bauteilbeschribung  Silicon PNP RF Power Transistor
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FZT751 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP RF Power Transistor
FZT751
www.iscsemi.com
1
FEATURES
·
High voltage
·
IC = 2A High Continuous Current
·
Low Saturation Voltage
·
Complementary PNP Type: FZT651
APPLICATIONS
·
Motor drive
·
Lighting circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Peak pulse current
-4
A
PD
Collector Power Dissipation
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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