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STP90N4F3 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STP90N4F3
Bauteilbeschribung  N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET
PDF  14 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP90N4F3 Datenblatt(HTML) 5 Page - STMicroelectronics

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STD90N4F3 - STP90N4F3 - STU90N4F3
Electrical characteristics
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Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
15
50
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
40
15
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD=80 A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A,
di/dt = 100 A/µs,
VDD=30 V, Tj=150°C
(see Figure 15)
45
60
2.8
ns
nC
A



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