| Datenblatt-Suchmaschine für elektronische Bauteile |
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STT818B Datenblatt(PDF) 1 Page - STMicroelectronics |
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STT818B Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() August 2007 Rev 5 1/10 10 STT818B High gain low voltage PNP power transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (hFE) ■ 3 A continuous collector current (IC) Applications ■ Power management in portable equipments ■ Switching regulator in battery charger applications Description The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagram SOT23-6L Table 1. Device summary Order code Marking Package Packaging STT818B 818B SOT23-6L Tape & reel www.st.com |
Ähnliche Teilenummer - STT818B_07 |
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Ähnliche Beschreibung - STT818B_07 |
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