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STGD18N40LZ Datenblatt(PDF) 7 Page - STMicroelectronics

Teilenummer STGD18N40LZ
Bauteilbeschribung  EAS 180 mJ - 400 V - internally clamped IGBT
PDF  18 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD18N40LZ Datenblatt(HTML) 7 Page - STMicroelectronics

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STGD18N40LZ - STGB18N40LZ
Electrical characteristics
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Figure 8.
Collector current vs collector
emitter voltage @ 175 °C
Figure 9.
Transfer characteristics
Figure 10.
Collector emitter leakage current
vs. temperature
Figure 11.
Normalized collector emitter
breakdown voltage vs temperature
Figure 12.
Normalized gate threshold voltage
vs temperature
Figure 13.
Normalized collector emitter
voltage vs temperature
0
10
20
30
40
50
60
01
2
3
45
6
TC = 175 °C
VGE = 3.8 V
VGE = 4 V
VGE = 4.5 V
VGE = 8 V
VGE = 5 V
VCE (V)
IC (A)
HV42400
0
5
10
15
20
25
30
35
40
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGE (V)
IC (A)
VCE= 5V
25°C
-40°C
175°C
0
5
10
15
20
25
30
35
40
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGE (V)
IC (A)
VCE= 5V
25°C
-40°C
175°C
HV38710



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