SD56150 datasheet(1/8 Pages) STMICROELECTRONICS

Teilenummer	SD56150

Bauteilbeschribung	RF POWER TRANSISTORS The LdmoST FAMILY

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

November, 27 2002

SD56150

RF POWER TRANSISTORS

The

LdmoST FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION, PUSH-

PULL

• POUT = 150 W WITH 13 dB gain @ 860 MHz /32V

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

DESCRIPTION

The SD56150 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0 GHz.

The SD56150

is designed for high gain and

broadband performance operating in common

source mode at 32 V. Its internal matching makes it

ideal for TV broadcast applications requiring high

linearity.

PIN CONNECTION

1

3

5

2

1. Drain

2. Drain

3. Source

4. Gate

5. Gate

4

M252

epoxy sealed

ORDER CODE

SD56150

BRANDING

SD56150

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

17

A

PDISS

Power Dissipation (@ Tc = 70 °C)

236

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.55

°C/W

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