CHA3063

5.5-23GHz Driver Amplifier

Ref : DSCHA3063-8144 - 23 May 08

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on wafer

Tamb = +25°C, Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V)

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

5.5

23

GHz

G

Small signal gain (5.5-6GHz)

Small signal gain (6-23GHz)

17

18

19

dB

dB

∆G

Small signal gain flatness

±1.0

dB

Is

Reverse isolation

35

dB

P1dB

CW output power at 1dB compression (1)

+16

+18

dBm

Pout

Output Power (Pin=0dBm)

+18

+20

dBm

OIP3

Output 3rd order intercept point (2)

28

dBm

RL_IN

Input Return Loss (3)

-15

-7

dB

RL_OUT

Output Return Loss (3)

-15

-7

dB

NF

Noise figure

4.5

6

dB

160

210

mA

(1) These values are representative for CW on-wafer measurements that are made without

bonding wires at the RF ports.

(2) Value representative for CW on jig measurement

(3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz

Tamb. = 25°C

Symbol

Parameter

Values

Unit

Vds

Drain bias voltage_small signal

5.0

V

Ids

Drain bias current_small signal

210

mA

Vg

Gate bias voltage

-2 to +0.4

V

Ig

Gate bias current

0.7

mA

Vgd

Maximum negative gate drain Voltage (Vg-Vd)

-5

V

Pin

Maximum continuous input power

Maximum peak input power overdrive (2)

+1

+15

dBm

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.