ST13003-K datasheet(3/10 Pages) STMICROELECTRONICS

Teilenummer	ST13003-K

Bauteilbeschribung	High voltage fast-switching NPN power transistor

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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ST13003-K

Electrical characteristics

3/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 2.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector cut-off current

(VBE =-1.5V)

VCE =700V

Tj = 125°C

V(BR)EBO

Emitter-Base breakdown

voltage (IC = 0)

IE =10mA

918

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =10mA

L =25mH

400

VCE(sat) (1) Collector-emitter

saturation voltage

IC = 0.5A

_ IB = 0.1A

IC = 1A

_ _ IB = 0.25A

IC = 1.5A _ _ IB = 0.5A

0.5

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 0.5A

_ IB = 0.1A

IC = 1A

_ _ IB = 0.25A

1.2

hFE

DC current gain

IC =0.5A

VCE =2V

IC =1A

VCE =2V

RESISTIVE LOAD

Rise time

Storage time

Fall time

VCC = 125V

IC = 1A

IB1 = 0.2A

IB2 = -0.2A

Tp = 25µs

0.7

µs

INDUCTIVE LOAD

Storage time

IC = 1A

IB1 = 0.2A

VBE =-5V

L =50mH

VClamp =300V

0.8

µs

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