ST92F120JR6T datasheet(44/320 Pages) STMICROELECTRONICS

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ST92F120 - SINGLE VOLTAGE FLASH & EEPROM

3 SINGLE VOLTAGE FLASH & EEPROM

3.1 INTRODUCTION

The Flash circuitry contains one array divided in

two main parts that can each be read independ-

ently. The first part contains the main Flash array

for code storage, a reserved array (TestFlash) for

system routines and a 128-byte area available as

one time programmable memory (OTP). The sec-

ond part contains the two dedicated Flash sectors

used for EEPROM Hardware Emulation.

The write operations of the two parts are managed

by an embedded Program/Erase Controller, that

uses a dedicated ROM (256 words of 12 bits

each). Through a dedicated RAM buffer the Flash

and the EEPROM can be written in blocks of 16

bytes.

Figure 23. Flash Memory structure (Example for 128K Flash device)

230000h

000000h

010000h

01C000h

01E000h

228000h

22C000h

Sector F0

64 Kbytes

Sector F1

48 Kbytes

Sector F2

8 Kbytes

Sector F3

8 Kbytes

Sector F4/E0

4 Kbytes

Sector F5/E1

4 Kbytes

TestFlash

8 Kbytes

Program / Erase

Controller

RAM buffer

16 bytes

Interface

Address

Data

231F80h

User OTP and Protection registers

8 sense +

8 program load

8 sense +

8 program load

ST92F120JR6T Datenblatt(PDF) 44 Page - STMicroelectronics

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