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EM641FP16 Datenblatt(PDF) 4 Page - Emerging Memory & Logic Solutions Inc

Teilenummer EM641FP16
Bauteilbeschribung  256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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Hersteller  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM641FP16 Datenblatt(HTML) 4 Page - Emerging Memory & Logic Solutions Inc

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EM641FP16 Series
Low Power, 256Kx16 SRAM
4
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=V SS to VCC
-1
-
1
uA
Output leakage current
ILO
CS =VIH or OE=V IH or WE=V IL, LB=UB=VIH ,
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS =VIL, VIN=VIH or VIL
-
-
2
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, I
IO=0mA,
CS <0.2V, LB<0.2V or/and UB<0.2V,
VIN<0.2V or VIN>VCC-0.2V
-
-
2
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS =VIL, LB=VIL or/and UB=V IL, VIN=V IL or VIH
-
-
12
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.2
V
Output high voltage
VOH
IOH = -1.0mA
1.4
-
-
V
Standby Current (CMOS)
ISB1
CS >VCC-0.2V(CS controlled) or
LB=UB
≥ V CC-0.2V, CS<0.2V(LB/UB Controlled)
Other inputs=0~VCC
(Typ. condition : VCC =1.8V @ 25
o C)
(Max. condition : VCC=2.2V @ 85
oC)
LL
LF
-
1
5
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.65
1.8
2.2
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
1.4
-
VCC + 0.3
2)
V
Input low voltage
V
IL
-0.33)
-
0.4
V
CAPACITANCE1) (f =1MHz, TA=25
oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN=0V
-
8
pF
Input/Ouput capacitance
C
IO
V
IO =0V
-
10
pF



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