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V53C8129H40 Datenblatt(PDF) 1 Page - Mosel Vitelic, Corp |
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V53C8129H40 Datenblatt(HTML) 1 Page - Mosel Vitelic, Corp |
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1 / 18 page ![]() MOSEL VITELIC 1 V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY V53C8129H Rev. 1.3 July 1997 HIGH PERFORMANCE 35 40 45 50 Max. RAS Access Time, (t RAC) 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (t CAA) 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (t PC) 14 ns 15 ns 17 ns 19 ns Min. Read/Write Cycle Time, (t RC) 70 ns 75 ns 80 ns 90 ns Features s 128K x 8-bit organization s RAS access time: 35, 40, 45, 50 ns s EDO Page Mode supports sustained I/O data rates up to 71.5 MHz s Low power dissipation • V53C8129H-50 — Operating Current: 135 mA max — TTL Standby Current: 2.0 mA max s Low CMOS Standby Current: 1.0 mA max s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability s Refresh Interval: 512 cycles/8 ms s Available in 26/24 pin 300 mil SOJ package Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Page Mode with extended data out operation allows random ac- cess of up to 256 columns (x8) bits within a row with cycle times as short as 14 ns. Because of static cir- cuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow ad- dress pipelining while relaxing many critical system timing requirements for fast usable speed. These features make the V53C8129H ideally suited for graphics, digital signal processing and high perfor- mance peripherals. Device Usage Chart Operating Temperature Range Package Outline Access Time (ns) Power Temperature Mark K 35 40 45 50 Std. 0 °C to 70 °C • • • • • • Blank |
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