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STB40NF10 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STB40NF10
Bauteilbeschribung  N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET
PDF  6 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB40NF10 Datenblatt(HTML) 1 Page - STMicroelectronics

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STB40NF10
N - CHANNEL 100V - 0.030
Ω - 40A TO-263
LOW GATE CHARGE STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.030
Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequen-
cy isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
®
INTERNAL SCHEMATIC DIAGRAM
May 2000
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
100
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC40
A
ID
Drain Current (continuous) at Tc = 100
oC25
A
IDM(
•)
Drain Current (pulsed)
160
A
Ptot
T otal Dissipation at Tc =25
oC
140
W
Derating Factor
0.93
W /
oC
EAS (1)
Single Pulse Avalanche Energy
135
mJ
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
( 1
) starting Tj =25 oC, ID =40A , VDD = 50V
TYPE
VDSS
RDS(on )
ID
STB40NF10
100 V
< 0.035
Ω
40 A
D
2PAK
TO-263
(Suffix ”T4”)
1
3
1/6


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