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STB4NB80 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STB4NB80
Bauteilbeschribung  N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
PDF  6 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB4NB80 Datenblatt(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 400 V
ID = 2 A
RG = 4.7
Ω
VGS = 10 V
14
8
20
12
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V
ID = 4 A VGS = 10 V
21
7
9
29
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640V
ID = 4 A
RG = 4.7
Ω VGS = 10 V
12
9
16
17
13
22
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
4
16
A
A
VSD (
∗)
Forward On Voltage
ISD =4 A
VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A
di/dt = 100 A/
µs
VDD = 100 V
Tj = 150
o C
600
3.3
11
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STB4NB80
3/6



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