STB5NB80 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

td(on)

Turn-on delay Time

Rise Time

VDD = 400 V

ID =3 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

Q gs

Qgd

Tot al Gate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 480 V

ID =5.6 A VGS =10 V

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

tr(Voff)

Off -volt age Rise Time

Fall Time

Cross-over Time

VDD = 640 V

ID =5.6 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

VSD (

∗)

Forward On Volt age

ISD =5 A

VGS =0

1. 6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =5.6 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

(see test circuit, figure 5)

700

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STB5NB80

3/8

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