2STA1962 datasheet(1/9 Pages) STMICROELECTRONICS

Teilenummer	2STA1962

Bauteilbeschribung	High power PNP epitaxial planar bipolar transistor

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 9 page

July 2008

Rev 3

1/9

9

Features

■ High breakdown voltage VCEO = -230 V

■ Complementary to 2STC5242

■ Fast-switching speed

■ Typical fT = 30 MHz

Application

■ Audio power amplifier

Description

This device is a PNP transistor manufactured

using new BiT-LA (Bipolar Transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

1

2

3

TO-3P

Order code

Marking

Package

Packaging

2STA1962

TO-3P

Tube

2STA1962

High power PNP epitaxial planar bipolar transistor

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