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2STC2510 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer 2STC2510
Bauteilbeschribung  High power NPN epitaxial planar bipolar transistor
PDF  7 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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2STC2510 Datenblatt(HTML) 3 Page - STMicroelectronics

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2STC2510
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
1.
Pulsed duration = 300 µs, duty cycle
≤ 1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 100 V
10
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
10
µA
V(BR)CEO
(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
100
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
100
V
V(BR)EBO
(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 12 A
IB = 1.2 A
1.5
V
VBE
(1)
Base-emitter voltage
VCE = 4 V
IB = 12 A
1.8
V
hFE
DC current gain
IC = 12 A
VCE = 4 V
40
80
fT
Transition frequency
IC = 0.5 A
VCE = 12
V
20
MHz



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