| Datenblatt-Suchmaschine für elektronische Bauteile |
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AP2126 Datenblatt(PDF) 4 Page - BCD Semiconductor Manufacturing Limited |
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AP2126 Datenblatt(HTML) 4 Page - BCD Semiconductor Manufacturing Limited |
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4 / 12 page ![]() 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 4 Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited Data Sheet Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10sec) TLEAD 260 oC Thermal Resistance RθJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 300 V Absolute Maximum Ratings (Note 1) Parameter Symbol Min Max Unit Input Voltage VIN -6 V Operating Junction Temperature Range TJ -40 85 oC Recommended Operating Conditions Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. |
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