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STGD7NB60ST4 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STGD7NB60ST4
Bauteilbeschribung  N-CHANNEL 7A - 600V DPAK Power MESH IGBT
PDF  8 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NB60ST4 Datenblatt(HTML) 1 Page - STMicroelectronics

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STGD7NB60S
N-CHANNEL 7A - 600V DPAK
Power MESH
™ IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
VERY LOW ON-VOLTAGE DROP (Vcesat)
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs,
with
outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
s
MOTOR CONTROL
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25
oC15
A
IC
Collector Current (continuous) at Tc = 100
oC7
A
ICM(
•)
Collector Current (pulsed)
60
A
Ptot
Total Dissipation at Tc = 25
oC55
W
Derating Factor
0.44
W/
o C
Tstg
Storage Temperature
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
•) Pulse width limited by safe operating area
TYPE
VCES
VCE(sat)
IC
STGD7NB60S
600 V
< 1.6 V
7 A
November 1999
1
3
DPAK
TO-252
(Suffix "T4")
1/8


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