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STN2N06 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STN2N06
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  5 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN2N06 Datenblatt(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
46
60
260
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
2A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
40
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ < 1%)
10
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100
oC, pulse width limited by Tj max, δ < 1%)
1.3
A
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
o C
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 1 A
VGS = 10 V
ID = 1 A
Tc = 100
o C
0.21
0.25
0.5
Ω
Ω
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
2A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 1 A
0.8
1.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0 V
260
90
30
340
120
40
pF
pF
pF
STN2N06
2/5



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