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STN2N10L Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STN2N10L
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  5 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN2N10L Datenblatt(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 50 V
ID = 4 A
RG = 4.7
Ω
VGS = 5 V
6
20
10
30
ns
ns
(di/dt)on
Turn-on Current Slope
VDD = 80 V
ID = 8 A
RG = 4.7
Ω
VGS = 5 V
380
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V
ID = 8 A
VGS = 5 V
10
6
3
15
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 80 V
ID = 8 A
RG = 4.7
Ω
VGS = 5 V
10
10
20
15
15
30
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
VSD (
∗)
Forward On Voltage
ISD = 2 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 8 A
di/dt = 100 A/
µs
VDD = 30 V
Tj = 150
oC
90
0.27
6
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STN2N10L
3/5



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