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STN3NF06 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STN3NF06
Bauteilbeschribung  N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET
PDF  8 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN3NF06 Datenblatt(HTML) 1 Page - STMicroelectronics

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December 2002
.
STN3NF06
N-CHANNEL 60V - 0.07
Ω - 4A SOT-223
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.07 Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
AVALANCHE RUGGED TECHNOLOGY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC COVERTERS
s
DC MOTOR CONTROL (DISK DRIVERS, etc.)
s
SYNCHRONOUS RECTIFICATION
TYPE
VDSS
RDS(on)
ID
STN3NF06
60 V
< 0.1
Ω
4 A
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C
4A
ID
Drain Current (continuous) at TC = 100°C
2.9
A
IDM(•)
Drain Current (pulsed)
16
A
Ptot
Total Dissipation at TC = 25°C
3.3
W
Derating Factor
0.026
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
10
V/ns
EAS (2)
Single Pulse Avalanche Energy
200
mJ
Tstg
Storage Temperature
-55 to 150
°C
Tj
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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