STN4NF03 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STN4NF03L

2/8

THERMAL DATA

Note: (*) When mounted on 1 in2 FR-4 board , 2 oz Cu, t<10s.

Note: (**) Minimum recommended footprint

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-PCB

Thermal Resistance Junction-PC Board Max (*)

°C/W

Rthj-PCB

Thermal Resistance Junction-PCB Max (**)

100

°C/W

Maximum Lead Temperature For Soldering Purpose

(1.6 mm from case for 10s)

260

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±16V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID =2 A

0.039

0.05

Ω

VGS =5V, ID =2 A

0.046

0.06

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =10V, ID =2 A

Ciss

Input Capacitance

VDS =25V,f= 1MHz, VGS =0

330

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

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