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STP11NM60FP Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP11NM60FP
Bauteilbeschribung  N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™ Power MOSFET
PDF  12 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11NM60FP Datenblatt(HTML) 3 Page - STMicroelectronics

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STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300V, ID = 5.5A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
20
ns
Qg
Total Gate Charge
VDD = 400V, ID =11A,
VGS =10V
30
nC
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD =400V, ID = 11A,
RG = 4.7Ω, VGS =10V
(see test circuit, Figure 5)
6ns
tf
Fall Time
11
ns
tc
Cross-over Time
19
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
11
A
ISDM (2)
Source-drain Current (pulsed)
44
A
VSD (1)
Forward On Voltage
ISD =11A, VGS =0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
390
3.8
19.5
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
570
5.7
20
ns
µC
A
Safe Operating Area for TO-220/D2PAK/I2PAK
Safe Operating Area for TO-220FP



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