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EMIF02-AV01F3 Datenblatt(PDF) 2 Page - STMicroelectronics |
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EMIF02-AV01F3 Datenblatt(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics EMIF02-AV01F3 2/7 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vpp Internal pins (A1, C1) ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge External pins (A2, C2) ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge 2 2 15 8 kV Tj Maximum junction temperature 125 °C PTOT Total Power Dissipation 200 mW Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameters VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between input and output Cline Input capacitance per line Symbol Test conditions Min Typ Max Unit VBR IR = 1 mA 14 18 V IRM VRM = 3 V per line 0.5 µA RI/O 12 15 18 Ω Cline Vline = 0 V, VOSC = 30 mV, F = 100 kHz 2.56 3.2 3.84 nF I V IPP VCL VBR VRM IR IRM IRM IR IPP VRM VBR VCL |
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