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STB210NF02 Datenblatt(PDF) 6 Page - STMicroelectronics

Teilenummer STB210NF02
Bauteilbeschribung  N-CHANNEL 20V - 0.0026 ohm - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET
PDF  14 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STB210NF02 Datenblatt(HTML) 6 Page - STMicroelectronics

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STB210NF02/-1 STP210NF02
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Thermal Resistance Rthj-a vs PCB Copper Area
Max Power Dissipation vs PCB Copper Area
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .



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