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STP3NA90 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP3NA90
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  6 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NA90 Datenblatt(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =450 V
ID =1.5 A
RG =4.7
Ω
VGS =10 V
10
10
15
15
ns
ns
(di/ dt)on
Turn-on Current Slope
VDD =720 V
ID =3 A
RG =47
Ω
VGS =10 V
360
A/
µs
Qg
Qgs
Qgd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
VDD =720 V
ID =3 A
VGS =10 V
35
6
14
50
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
VDD =720 V
ID =3 A
RG =4.7
Ω
VGS =10 V
11
8
19
10
13
26
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
3
12
A
A
VSD (
∗)Forward On Voltage
ISD =3 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
oC
950
14. 2
30
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STP3NA90/FI
3/6



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