P3NC60FP datasheet(3/9 Pages) STMICROELECTRONICS

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STP3NC60/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 300 V, ID = 1.5 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

9ns

Total Gate Charge

VDD = 480V, ID =3 A,

VGS = 10V

18.2

Qgs

Gate-Source Charge

2.3

Qgd

Gate-Drain Charge

4.4

Symbol

Parameter

Test Condit ions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 480V, ID =3 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 3 A, VGS =0

1.6

trr

Reverse Recovery Time

ISD = 3 A, di/dt = 100A/µs, VDD

= 100V, Tj = 150°C

(see test circuit, Figure 5)

420

Qrr

Reverse Recovery Charge

1.5

µC

IRRM

Reverse Recovery Current

7.1

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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