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STPIC6A259MTR Datenblatt(PDF) 3 Page - STMicroelectronics |
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STPIC6A259MTR Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STPIC6A259 3/13 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. THERMAL DATA RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Logic Supply Voltage (See Note 2) 7V VI Logic Input Voltage Range -0.3 to 7 V VDS Power DMOS Drain to Source Voltage (See Note 2) 50 V IDS Continuous Source to Drain Diode Anode Current 1A IDS Pulsed Source to Drain Diode Anode Current (See Note 3) 2A ID Pulsed Drain Current, Each Output, All Output ON (TC=25°C) 1.1 A ID Continuous Current, Each Output, All Output ON (TC=25°C) 350 mA ID Peak Drain Current Single Output (TC=25°C) (See Note 3) 1.1 A EAS Single Pulse Avalanche Energy (See Note 6) 75 mJ IAS Avalanche Current (See Note 4) 600 mA Pd Continuous total dissipation (TC ≤ 25°C) 1750 mW Pd Continuous total dissipation (TC = 125°C) 350 mW TJ Operating Virtual Junction Temperature Range -40 to +150 °C TC Operating Case Temperature Range -40 to +125 °C Tstg Storage Temperature Range -65 to +150 °C TL Lead Temperature 1.6mm (1/16inch) from case for 10 seconds 260 °C Symbol Parameter Unit Rthj-case Thermal Resistance Junction-case 10 °C/W Rthj-amb Thermal Resistance Junction-ambient 50 °C/W Symbol Parameter Min. Max. Unit VCC Logic Supply Voltage 4.5 5.5 V VIH High Level Input Voltage 0.85VCC VCC V VIL Low Level Input Voltage 0 0.15VCC V IDP Pulse Drain Output Current (TC=25°C, VCC=5V) (see note 3, 5) -1.8 0.6 A tsu Set-up Time, D High Before G ↑ (see Figure 2) 10 ns th Hold Time, D High Before G ↑ (see Figure 2) 5 ns tW Pulse Duration (see Figure 2) 15 ns TC Operating Case Temperature -40 125 °C |
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