2ST5949_0807 datasheet(1/8 Pages) STMICROELECTRONICS

Teilenummer	2ST5949_0807

Bauteilbeschribung	High power NPN epitaxial planar bipolar transistor

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2008

Rev 3

1/8

8

2ST5949

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage VCEO = 250 V

■ Complementary to 2ST2121

■ Fast-switching speed

■ Typical ft = 25 MHz

■ Fully characterized at 125

oC

Applications

■ Audio power amplifier

Description

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Table 1.

Device summary

Figure 1.

Internal schematic diagram

TO-3

1

2

Order code

Marking

Package

Packaging

2ST5949

TO-3

tray

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