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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2STW1695 Datenblatt(PDF) 1 Page - STMicroelectronics |
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2STW1695 Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  October 2008 Rev 4 1/9 9 2STW1695 High power PNP epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = -140 V ■ Complementary to 2STW4468 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary TO-247 1 2 3 Order code Marking Package Packaging 2STW1695 2STW1695 TO-247 Tube www.st.com |
Ähnliche Teilenummer - 2STW1695 |
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Ähnliche Beschreibung - 2STW1695 |
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