STPS24045 datasheet(3/4 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

5E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig.4 : Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

VR(V)

IR(mA)

Tj=100

°C

Tj=125

°C

Tj=75

°C

Tj=50

°C

Tj=25

°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

1E-3

1E-2

1E-1

1E+0

100

200

300

400

500

600

700

800

t(s)

IM(A)

Tc=75

°C

Tc=50

°C

Tc=25

°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

VR(V)

C(nF)

F=1MHz

Tj=25

°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

500

VFM(V)

IFM(A)

Tj=125

°C

(Typical values)

Tj=25

°C

Tj=125

°C

Fig. 7:

Forward voltage drop versus forward

current (maximum values, per diode).

STPS24045TV

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