BUX98 datasheet(1/4 Pages) STMICROELECTRONICS

Teilenummer	BUX98

Bauteilbeschribung	HIGH POWER NPN SILICON TRANSISTORS, imag

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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BUX98

BUX98A

HIGH POWER NPN SILICON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

APPLICATIONS

s

HIGH FREQUENCY AND EFFICENCY

CONVERTERS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BUX98 and BUX98A are Silicon Multi-

Epitaxial Mesa NPN transistor in jedec TO-3

metal case, intended and industrial applications

from single and three-phase mains operation.

INTERNAL SCHEMATIC DIAGRAM

September 2003

1

2

TO-3

(version R)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BUX98

BUX98A

VCER

Collector-Emitter Voltage (RBE =

≤ 10 Ω)

850

1000

V

VCES

Collector-Base Voltage (VBE = 0)

850

1000

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

450

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

30

A

ICM

Collector Peak Current (tp < 5 ms)

60

A

ICP

Collector Peak Current non Rep. (tp < 20

µs)

80

A

IB

Base Current

8

A

IBM

Base Peak Current (tp < 5 ms)

30

A

Ptot

Total Power Dissipation at Tcase

< 25 oC

250

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max Operating Junction Temperature

200

oC

®

1/4

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