| Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS3L25 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STPS3L25 Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 4 page ![]() 0 5 10 15 20 25 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 IR(mA) Tj=125°C Tj=25°C Tj=100°C Tj=150°C VR(V) Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 12 5 10 20 30 10 100 500 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 50 IFM(A) Typical values Tj=150°C Tj=25°C Tj=100°C Tj=125°C VFM(V) Fig. 7-1: Forward voltage drop versus forward current (maximum values, high level). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 30 40 50 60 70 80 90 100 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IFM(A) Typical values Tj=150°C Tj=25°C Tj=100°C Tj=125°C VFM(V) Fig. 7-2: Forward voltage drop versus forward current (maximum values, low level). STPS3L25S 3/4 |
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