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2SB1688 Datenblatt(PDF) 1 Page - Renesas Technology Corp

Teilenummer 2SB1688
Bauteilbeschribung  Silicon PNP Epitaxial High voltage amplifier
PDF  6 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SB1688 Datenblatt(HTML) 1 Page - Renesas Technology Corp

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Rev.3.00 Aug 10, 2005 page 1 of 5
2SB1688
Silicon PNP Epitaxial
High voltage amplifier
REJ03G0679-0300
(Previous ADE-208-975A)
Rev.3.00
Aug.10.2005
Features
• High breakdown voltage
VCEO = -300V min
Outline
1. Emitter
2. Collector
3. Base
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–300
V
Collector to emitter voltage
VCEO
–300
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–50
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C


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