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2SC1472 Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer 2SC1472
Bauteilbeschribung  Silicon NPN Epitaxial, Darlington
PDF  6 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC1472 Datenblatt(HTML) 4 Page - Renesas Technology Corp

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2SC1472(K)
Rev.2.00 Aug 10, 2005 page 4 of 5
Base Current IB (mA)
2.4
2.0
1.6
1.2
0.8
0.4
0
1100
30
300
3
10
1,000
Collector to Emitter Saturation
Voltage vs. Base Current
Pulse
Ta = 25
°C
IC = 500 mA
20 50 100 200
75
Collector Current IC (mA)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1100
20
200
210
550
500
Base to Emitter Saturation
Voltage vs. Collector Current
Pulse
IC = 1,000 IB
Ta = –50°
C
–25
25
50
100
0
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
10
8
6
4
2
0
0.1
30
3
1.0
10
0.3
Input and Output Capacitance vs. Voltage
f = 1 MHz
Cob(IE = 0)
Cib(IC = 0)
Base Current IC (mA)
30
10
3
1.0
0.3
0.1
0.03
0.3
30
10
100
1.0
3
300
Switching Time vs. Collector Current
toff
tstg
ton
td
IC = 100 IB1 = –100 IB2
VCC = 10.5 V
Switching Time Test Circuit
50
50
0.002
–6 V
10.5 V
D.U.T.
CRT
P.G.
tr, tf
≤ 15 ns
PW ³ 10
µs
duty ratio
≤ 10%
+
–
50
0.002
+
–
Unit R :
Ω
C :
µF
13 V
0
0
10%
Response Waveform
90%
ton
toff
td
tstg
Input
Output
90%
10%
10%
90%



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