STP24NM65N datasheet(1/19 Pages) STMICROELECTRONICS

Teilenummer	STP24NM65N

Bauteilbeschribung	N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 19 page

February 2008

Rev 1

1/19

19

STW24NM65N-STI24NM65N-STF24NM65N

STB24NM65N - STP24NM65N

N-channel 650 V - 0.16

Ω - 19 A - TO-220 - TO-220FP - D2PAK

I2PAK - TO-247 second generation MDmesh™ Power MOSFET

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices is designed using the

second generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Type

VDSS

(@TJmax)

RDS(on) max

ID

STB24NM65N

710 V

< 0.19

Ω

19 A

STI24NM65N

710 V

< 0.19

Ω

19 A

STF24NM65N

710 V

< 0.19

Ω

19 A(1)

1.

Limited only by maximum temperature allowed

STP24NM65N

710 V

< 0.19

Ω

19 A

STW24NM65N

710 V

< 0.19

Ω

19 A

TO-220

TO-220FP

I²PAK

1

2

3

1

2

3

1

2

3

1

2

3

TO-247

1

3

D²PAK

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB24NM65N

24NM65N

D²PAK

Tape and reel

STI24NM65N

24NM65N

I²PAK

Tube

STF24NM65N

24NM65N

TO-220FP

Tube

STP24NM65N

24NM65N

TO-220

Tube

STW24NM65N

24NM65N

TO-247

Tube

www.st.com

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