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2SC5757 Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SC5757
Bauteilbeschribung  Silicon NPN Epitaxial VHF/UHF wide band amplifier
PDF  9 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5757 Datenblatt(HTML) 3 Page - Renesas Technology Corp

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2SC5757
Rev.5.00 Aug 10, 2005 page 3 of 8
Main Characteristics
0
50
100
150
200
100
Collector Power Dissipation Curve
10
100
200
0
120
Collector Current
IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
VCE = 1 V
00.4
0.6
1
Typical Transfer Characteristics
0
0.5
1
1.5
3.5
Typical Output Characteristics
Ambient Temperature
Ta (°C)
Collector to Emitter Voltage
VCE (V)
Base to Emitter Voltage
VBE (V)
0.2
0.8
VCE = 1 V
2.5
2
3
20
40
60
80
100
50
40
30
20
10
500
µA
IB = 50 µA
100 µA
150 µ
A
200 µ
A
250 µ
A
300
µA
350
µA
400
µA
450
µA
10
20
30
40
50
1.2
2.0
Collector to Base Voltage VCB (V)
Collector Output Capacitance vs.
Collector to Base Voltage
0.4
0.8
1.2
1.6
2.0
00.4
0.8
1.6
12
5
10
20
50
100
0
4
8
12
16
20
Collector Current
IC (mA)
Gain Bandwidth Product vs.
Collector Current
VCE = 1 V
f = 2 GHz
IE = 0
f = 1 MHz



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