2SC5849 datasheet(2/9 Pages) RENESAS

Teilenummer	2SC5849

Bauteilbeschribung	Silicon NPN Epitaxial VHF/UHF wide band amplifier

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Hersteller	RENESAS [Renesas Technology Corp]

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2SC5849

Rev.1.00 Aug 10, 2005 page 2 of 8

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO



IC = 10

µA, IE = 0

Collector cutoff current

ICBO



0.1

µA

VCB = 15 V, IE = 0

Collector cutoff current

ICEO



0.1

µA

VCE = 6.0 V, RBE =

∞

Emitter cutoff current

IEBO



0.1

µA

VEB = 1.5 V, IC = 0

DC current transfer ratio

hFE

110

140

VCE = 1 V, IC = 5 mA

Reverse transfer capacitance

Cre



0.5



VCE = 1 V, Emitter ground,

f = 1 MHz

Collector output capacitance

Cob



0.85

1.15

VCB = 1 V, IE = 0, f = 1 MHz

Gain bandwidth product

fT(1)

1.0

4.0



GHz

VCE = 1 V, IC = 5 mA

Gain bandwidth product

fT(2)



9.0



GHz

VCE = 1 V, IC = 30 mA

Power gain



VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure



1.1

1.8

VCE = 1 V, IC = 5 mA,

f = 900 MHz

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