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2SD667ACTZ-E Datenblatt(PDF) 1 Page - Renesas Technology Corp

Teilenummer 2SD667ACTZ-E
Bauteilbeschribung  Silicon NPN Epitaxial
PDF  6 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD667ACTZ-E Datenblatt(HTML) 1 Page - Renesas Technology Corp

  2SD667ACTZ-E Datasheet HTML 1Page - Renesas Technology Corp 2SD667ACTZ-E Datasheet HTML 2Page - Renesas Technology Corp 2SD667ACTZ-E Datasheet HTML 3Page - Renesas Technology Corp 2SD667ACTZ-E Datasheet HTML 4Page - Renesas Technology Corp 2SD667ACTZ-E Datasheet HTML 5Page - Renesas Technology Corp 2SD667ACTZ-E Datasheet HTML 6Page - Renesas Technology Corp  
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Rev.2.00 Aug 10, 2005 page 1 of 5
2SD667, 2SD667A
Silicon NPN Epitaxial
REJ03G0769-0200
(Previous ADE-208-1137)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SB647/A
Outline
1. Emitter
2. Collector
3. Base
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SD667
2SD667A
Unit
Collector to base voltage
VCBO
120
120
V
Collector to emitter voltage
VCEO
80
100
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
1
1
A
Collector peak current
iC(peak)
2
2
A
Collector power dissipation
PC
0.9
0.9
W
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C


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